CD-SEM metrology for sub-10nm width features

Benjamin Bunday; Aron Cepler; Aaron Cordes; Abraham Arceo

doi:10.1117/12.2047099

2 April 2014 CD-SEM metrology for sub-10nm width features

Benjamin Bunday, Aron Cepler, Aaron Cordes, Abraham Arceo

Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 90500T (2014) https://doi.org/10.1117/12.2047099
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

This paper will explore the possibilities of critical dimension scanning electron microscope (CD-SEM) metrology at sub- 10 nm feature sizes using modeling. JMONSEL simulations will be used to illustrate SEM waveforms for very small features, as a function of beam energy, feature size, profile height and sidewall angle. It will also be shown that the dimensions of the electron beam and interaction volume have very strong influence on the results. Using modeled results, an assessment on required image quality for future tools will be presented, along with a framework for linking spot size and image resolution. Additionally, from the generated waveforms, various measurement algorithms will be evaluated for such future nanometer-scale applications.

Citation Download Citation

Benjamin Bunday, Aron Cepler, Aaron Cordes, and Abraham Arceo "CD-SEM metrology for sub-10nm width features", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500T (2 April 2014); https://doi.org/10.1117/12.2047099

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