2 April 2014 Optical volumetric inspection of sub-20nm patterned defects with wafer noise
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Abstract
We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D collected images into 3-D volumes of intensity information and also permits the use of multi-dimensional processing and thresholding techniques to enhance defect detectability. In this paper, the effects of wafer noise upon detectability using volumetric processing are assessed with both simulations and experiments using the SEMATECH 9 nm node intentional defect array. The potential extensibility and industrial application of this technique are evaluated.
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Bryan M. Barnes, Bryan M. Barnes, Francois Goasmat, Francois Goasmat, Martin Y. Sohn, Martin Y. Sohn, Hui Zhou, Hui Zhou, András E. Vladár, András E. Vladár, Richard M. Silver, Richard M. Silver, Abraham Arceo, Abraham Arceo, } "Optical volumetric inspection of sub-20nm patterned defects with wafer noise", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905016 (2 April 2014); doi: 10.1117/12.2048231; https://doi.org/10.1117/12.2048231
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