Optical volumetric inspection of sub-20nm patterned defects with wafer noise

Bryan M. Barnes; Francois Goasmat; Martin Y. Sohn; Hui Zhou; András E. Vladár; Richard M. Silver; Abraham Arceo

doi:10.1117/12.2048231

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2 April 2014 Optical volumetric inspection of sub-20nm patterned defects with wafer noise

Bryan M. Barnes, Francois Goasmat, Martin Y. Sohn, Hui Zhou, András E. Vladár, Richard M. Silver, Abraham Arceo

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Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 905016 (2014) https://doi.org/10.1117/12.2048231
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D collected images into 3-D volumes of intensity information and also permits the use of multi-dimensional processing and thresholding techniques to enhance defect detectability. In this paper, the effects of wafer noise upon detectability using volumetric processing are assessed with both simulations and experiments using the SEMATECH 9 nm node intentional defect array. The potential extensibility and industrial application of this technique are evaluated.

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Bryan M. Barnes, Francois Goasmat, Martin Y. Sohn, Hui Zhou, András E. Vladár, Richard M. Silver, and Abraham Arceo "Optical volumetric inspection of sub-20nm patterned defects with wafer noise", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905016 (2 April 2014); https://doi.org/10.1117/12.2048231

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