2 April 2014 Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography
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Abstract
Evaluation of resist shrinkage and precision by critical dimension scanning electron microscope (CD-SEM) for EUV resist patterns at around 20 nm exposed by 0.33 NA EUV tool was conducted. To investigate interaction between EUV resist and electron beam, an accurate and fast measurement method of resist shrinkage was established. Our method can avoid saturation of shrinkage at large dose conditions which was a demerit in conventional method. By applying the new method, pattern size dependence of shrinkage was measured with various line and space (L/S) patterns down to 20 nm. The result shows that resist shrinkage of fine L/S EUV resist pattern largely depends on line width rather than space width. A well-known trade-off relationship between shrinkage and precision was observed for EUV resist pattern as well as ArF resist pattern. Shrinkage of 1.6 nm and precision of 0.13 nm for 18 nm EUV resist pattern were obtained at a typical CD-SEM condition. We also measured shrinkage and precision for a dense L/S pattern at various exposure focus and dose conditions using a FEM wafer to examine the impact of process variability. To investigate the influence of EUV shadowing effect, we measured them for both horizontal and vertical patterns at different slit locations in exposure field. No systematic change of shrinkage and precision was observed through exposure focus and dose in the process window across slit location for both horizontal and vertical L/S patterns.
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Nobuhiro Okai, Erin Lavigne, Keiichiro Hitomi, Scott Halle, Shoji Hotta, Shunsuke Koshihara, Karen Petrillo, Atsuko Yamaguchi, Junichi Tanaka, Todd Bailey, "Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90501X (2 April 2014); doi: 10.1117/12.2045375; https://doi.org/10.1117/12.2045375
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