2 April 2014 Across wafer CD uniformity optimization by wafer film scheme at double patterning lithography process
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Abstract
The Double Patterning lithography (DPL) process is a well known method to overcome the k1 limit below 0.25, but the pattern final performance (OVL/CD) get more sensitive with the initial core CD uniformity, one of the main factors is across wafer CD uniformity control. Previous improvements applying scanner dose or PEB temperature multi-zone control, the others use the vacuum PEB plate design. In this study, we adopt various DPL sacrificial layers to modify wafer warpage level, it can adjust a suitable wafer warpage profile. By this method, we can achieve 30% CD uniformity improvement without the scanner dose/ PEB multi-zone heating compensation,
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Hsiao-Chiang Lin, Yang-Liang Li, Shiuan-Chuan Wang, Chien-Hung Liu, Zih-Song Wang, Jhung-Yuin Hsuh, "Across wafer CD uniformity optimization by wafer film scheme at double patterning lithography process", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905026 (2 April 2014); doi: 10.1117/12.2045875; https://doi.org/10.1117/12.2045875
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