2 April 2014 Across wafer CD uniformity optimization by wafer film scheme at double patterning lithography process
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Abstract
The Double Patterning lithography (DPL) process is a well known method to overcome the k1 limit below 0.25, but the pattern final performance (OVL/CD) get more sensitive with the initial core CD uniformity, one of the main factors is across wafer CD uniformity control. Previous improvements applying scanner dose or PEB temperature multi-zone control, the others use the vacuum PEB plate design. In this study, we adopt various DPL sacrificial layers to modify wafer warpage level, it can adjust a suitable wafer warpage profile. By this method, we can achieve 30% CD uniformity improvement without the scanner dose/ PEB multi-zone heating compensation,
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Hsiao-Chiang Lin, Hsiao-Chiang Lin, Yang-Liang Li, Yang-Liang Li, Shiuan-Chuan Wang, Shiuan-Chuan Wang, Chien-Hung Liu, Chien-Hung Liu, Zih-Song Wang, Zih-Song Wang, Jhung-Yuin Hsuh, Jhung-Yuin Hsuh, } "Across wafer CD uniformity optimization by wafer film scheme at double patterning lithography process", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905026 (2 April 2014); doi: 10.1117/12.2045875; https://doi.org/10.1117/12.2045875
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