Defect analysis methodology for contact hole grapho epitaxy DSA

Ryota Harukawa; Masami Aoki; Andrew Cross; Venkat Nagaswami; Shinichiro Kawakami; Takashi Yamauchi; Tadatoshi Tomita; Seiji Nagahara; Makoto Muramatsu; Takahiro Kitano

doi:10.1117/12.2046051

2 April 2014 Defect analysis methodology for contact hole grapho epitaxy DSA

Ryota Harukawa; Masami Aoki; Andrew Cross; Venkat Nagaswami; Shinichiro Kawakami; Takashi Yamauchi; Tadatoshi Tomita; Seiji Nagahara; Makoto Muramatsu; Takahiro Kitano

Author Affiliations +

Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 905027 (2014) https://doi.org/10.1117/12.2046051
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Next-generation lithography technology is required to meet the needs of advanced design nodes. Directed Self Assembly (DSA) is gaining momentum as an alternative or complementary technology to EUV lithography. We investigate defectivity on a 2xnm patterning of contacts for 25nm or less contact hole assembly by grapho epitaxy DSA technology with guide patterns printed using immersion ArF negative tone development. This paper discusses the development of an analysis methodology for DSA with optical wafer inspection, based on defect source identification, sampling and filtering methods supporting process development efficiency of DSA processes and tools.

Citation Download Citation

Ryota Harukawa, Masami Aoki, Andrew Cross, Venkat Nagaswami, Shinichiro Kawakami, Takashi Yamauchi, Tadatoshi Tomita, Seiji Nagahara, Makoto Muramatsu, Takahiro Kitano, "Defect analysis methodology for contact hole grapho epitaxy DSA", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905027 (2 April 2014); doi: 10.1117/12.2046051; https://doi.org/10.1117/12.2046051

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