2 April 2014 Defect analysis methodology for contact hole grapho epitaxy DSA
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Abstract
Next-generation lithography technology is required to meet the needs of advanced design nodes. Directed Self Assembly (DSA) is gaining momentum as an alternative or complementary technology to EUV lithography. We investigate defectivity on a 2xnm patterning of contacts for 25nm or less contact hole assembly by grapho epitaxy DSA technology with guide patterns printed using immersion ArF negative tone development. This paper discusses the development of an analysis methodology for DSA with optical wafer inspection, based on defect source identification, sampling and filtering methods supporting process development efficiency of DSA processes and tools.
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Ryota Harukawa, Ryota Harukawa, Masami Aoki, Masami Aoki, Andrew Cross, Andrew Cross, Venkat Nagaswami, Venkat Nagaswami, Shinichiro Kawakami, Shinichiro Kawakami, Takashi Yamauchi, Takashi Yamauchi, Tadatoshi Tomita, Tadatoshi Tomita, Seiji Nagahara, Seiji Nagahara, Makoto Muramatsu, Makoto Muramatsu, Takahiro Kitano, Takahiro Kitano, } "Defect analysis methodology for contact hole grapho epitaxy DSA", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905027 (2 April 2014); doi: 10.1117/12.2046051; https://doi.org/10.1117/12.2046051
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