Translator Disclaimer
2 April 2014 Defect analysis methodology for contact hole grapho epitaxy DSA
Author Affiliations +
Next-generation lithography technology is required to meet the needs of advanced design nodes. Directed Self Assembly (DSA) is gaining momentum as an alternative or complementary technology to EUV lithography. We investigate defectivity on a 2xnm patterning of contacts for 25nm or less contact hole assembly by grapho epitaxy DSA technology with guide patterns printed using immersion ArF negative tone development. This paper discusses the development of an analysis methodology for DSA with optical wafer inspection, based on defect source identification, sampling and filtering methods supporting process development efficiency of DSA processes and tools.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryota Harukawa, Masami Aoki, Andrew Cross, Venkat Nagaswami, Shinichiro Kawakami, Takashi Yamauchi, Tadatoshi Tomita, Seiji Nagahara, Makoto Muramatsu, and Takahiro Kitano "Defect analysis methodology for contact hole grapho epitaxy DSA", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905027 (2 April 2014);

Back to Top