2 April 2014 Accurate contour extraction from mask SEM image
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Abstract
Contour extraction of complicated optical proximity correction (OPC) patterns for advanced photomasks is increasingly needed in addition to the conventional mask CD measurement. The lithography simulation based on contour extraction from the SEM images on photomasks is one of the efficient methods to assure adequacy of OPC patterns. In this paper, the function of the above-mentioned contour extraction, and the performance requirements for the CD-SEM for this function using Mask CD-SEM 'Z7', the latest product of HOLON, and the scheme to correct the distortion are explained. Furthermore, the perspectives of the application of our contour extraction method are outlined.
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Izumi Santo, Izumi Santo, Akira Higuchi, Akira Higuchi, Mirai Anazawa, Mirai Anazawa, Hideaki Bandoh, Hideaki Bandoh, } "Accurate contour extraction from mask SEM image", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90502M (2 April 2014); doi: 10.1117/12.2046530; https://doi.org/10.1117/12.2046530
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