2 April 2014 Improvement of CD-SEM mark position measurement accuracy
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Abstract
CD-SEM is now attracting attention as a tool that can accurately measure positional error of device patterns. However, the measurement accuracy can get worse due to pattern asymmetry as in the case of image based overlay (IBO) and diffraction based overlay (DBO). For IBO and DBO, a way of correcting the inaccuracy arising from measurement patterns was suggested. For CD-SEM, although a way of correcting CD bias was proposed, it has not been argued how to correct the inaccuracy arising from pattern asymmetry using CD-SEM. In this study we will propose how to quantify and correct the measurement inaccuracy affected by pattern asymmetry.
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Kentaro Kasa, Kentaro Kasa, Kazuya Fukuhara, Kazuya Fukuhara, } "Improvement of CD-SEM mark position measurement accuracy", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90502N (2 April 2014); doi: 10.1117/12.2046540; https://doi.org/10.1117/12.2046540
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