2 April 2014 Spectroscopic critical dimension technology (SCD) for directed self assembly
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Abstract
Directed self-assembly (DSA) is being actively investigated as a potential patterning solution for future generation devices. While SEM based CD measurement is currently used in research and development, scatterometry-based techniques like spectroscopic CD (SCD) are preferred for high volume manufacturing. SCD can offer information about sub-surface features that are not available from CD-SEM measurement. Besides, SCD is a non-destructive, high throughput technique already adopted in HVM in several advanced nodes. The directed self assembly CD measurement can be challenging because of small dimensions and extremely thin layers in the DSA stack. In this study, the SCD technology was investigated for a 14 nm resolution PS-b-PMMA chemical epitaxy UW process optimized by imec. The DSA stack involves new materials such as cross-linkable polysterene (XPS) of thickness approximately 5 nm, ArF immersion resist (subsequently removed), -OH terminated neutral brush layer, and BCP material (Polystyrene-blockmethyl methacrylate of thickness roughly 20 to 30 nm). The mask contains a large CD and pitch matrix, for studying the quality of self-assembly as a function of the guide pattern dimensions. We report on the ability of SCD to characterize the dimensional variation in these targets and hence provide a viable process control solution.
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Senichi Nishibe, Senichi Nishibe, Thaddeus Dziura, Thaddeus Dziura, Venkat Nagaswami, Venkat Nagaswami, Roel Gronheid, Roel Gronheid, } "Spectroscopic critical dimension technology (SCD) for directed self assembly", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90502U (2 April 2014); doi: 10.1117/12.2046647; https://doi.org/10.1117/12.2046647
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