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27 March 2014 Novel non-chemically amplified (n-CARs) negative resists for EUVL
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We report the lithography performance of novel non chemical amplified (n-CARS) negative photoresist materials which are accomplished by homopolymers and copolymers that are prepared from monomers containing sulfonium groups. The latter have long been found to be sensitive to UV radiation and undergo polarity change on exposure. For this reason, these groups were chosen as radiation sensitive groups in non- CARs that are discussed herein. Novel n-CAR negative resists were synthesized and characterized for EUVL applications, as they are directly sensitive to radiation without utilizing the concept of chemical amplification. The n-CARs achieved 20 and 16 nm L/2S, L/S patterns to meet the ITRS requirements. We will also discuss the sensitivity and LER of these negative n-CARS to e-beam irradiation which will provide a basis for EUVL down to the 16 nm node and below. These new negative tone resist provide a viable path forward for designing non- chemically amplified resists that can obtain higher resolutions than current chemically amplified resists at competitive sensitivities.
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Vikram Singh, V. S. V. Satyanarayana, Satinder K. Sharma, Subrata Ghosh, and Kenneth E. Gonsalves "Novel non-chemically amplified (n-CARs) negative resists for EUVL", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905106 (27 March 2014);

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