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27 March 2014 Manufacturability improvements in EUV resist processing toward NXE:3300 processing
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As the design rule of semiconductor process gets finer, extreme ultraviolet lithography (EUVL) technology is aggressively studied as a process for 22nm half pitch and beyond. At present, the studies for EUV focus on manufacturability. It requires fine resolution, uniform, smooth patterns and low defectivity, not only after lithography but also after the etch process. In the first half of 2013, a CLEAN TRACKTM LITHIUS ProTMZ-EUV was installed at imec for POR development in preparation of the ASML NXE:3300. This next generation coating/developing system is equipped with state of the art defect reduction technology. This tool with advanced functions can achieve low defect levels. This paper reports on the progress towards manufacturing defectivity levels and latest optimizations towards the NXE:3300 POR for both lines/spaces and contact holes at imec.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuhei Kuwahara, Koichi Matsunaga, Takeshi Shimoaoki, Shinichiro Kawakami, Kathleen Nafus, Philippe Foubert, Anne-Marie Goethals, and Satoru Shimura "Manufacturability improvements in EUV resist processing toward NXE:3300 processing", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905108 (27 March 2014);


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