Paper
27 March 2014 Reduction of image placement error on photomask-making for multiple patterning
Takahiro Hiromatsu, Toru Fukui, Kenta Tsukagoshi, Kazunori Ono, Masahiro Hashimoto
Author Affiliations +
Abstract
To make photomasks with high overlay accuracy, “Charge Dissipation Layer (CDL)” materials have been developed. Commercialized CDL materials can reduce electro-static charging on the surface of resist during electron beam exposure. However, some side effects are introduced to the mask-making process. The resolution performance of chemically amplified resist (CAR) is degraded owing to acid diffusion from the CDL components to the resist surface. A newly developed CDL solved this problem by controlling the acid diffusion. A positive-tone CAR with the CDL showed no resolution degradation, and performance was maintained for over 30 days after coating CDL and resist. Furthermore, the CDL has been evaluated on a negative-tone CAR which is more sensitive to CDL.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahiro Hiromatsu, Toru Fukui, Kenta Tsukagoshi, Kazunori Ono, and Masahiro Hashimoto "Reduction of image placement error on photomask-making for multiple patterning", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90510U (27 March 2014); https://doi.org/10.1117/12.2046777
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Diffusion

Coating

Electron beam lithography

Electron beams

Photomasks

Photoresist processing

Chemically amplified resists

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