27 March 2014 Formation of sub-7 nm feature size PS-b-P4VP block copolymer structures by solvent vapour process
Author Affiliations +
Abstract
The nanometer range structure produced by thin films of diblock copolymers makes them a great of interest as templates for the microelectronics industry. We investigated the effect of annealing solvents and/or mixture of the solvents in case of symmetric Poly (styrene-block-4vinylpyridine) (PS-b-P4VP) diblock copolymer to get the desired line patterns. In this paper, we used different molecular weights PS-b-P4VP to demonstrate the scalability of such high χ BCP system which requires precise fine-tuning of interfacial energies achieved by surface treatment and that improves the wetting property, ordering, and minimizes defect densities. Bare Silicon Substrates were also modified with polystyrene brush and ethylene glycol self-assembled monolayer in a simple quick reproducible way. Also, a novel and simple in situ hard mask technique was used to generate sub-7nm Iron oxide nanowires with a high aspect ratio on Silicon substrate, which can be used to develop silicon nanowires post pattern transfer.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Atul Chaudhari, Tandra Ghoshal, Matthew T. Shaw, Cian Cummins, Dipu Borah, Justin D. Holmes, Michael A. Morris, "Formation of sub-7 nm feature size PS-b-P4VP block copolymer structures by solvent vapour process", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905110 (27 March 2014); doi: 10.1117/12.2046044; https://doi.org/10.1117/12.2046044
PROCEEDINGS
10 PAGES


SHARE
Back to Top