27 March 2014 Optimization of fullerene-based negative tone chemically amplified fullerene resist for extreme ultraviolet lithography
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Abstract
While the technological progress of Next Generation Lithography (NGL) steadily continues, further progress is required before successful insertion in high volume manufacturing is possible. A key issue is the development of new resists suitable to achieve higher lithographic resolution with acceptable sensitivity and line edge roughness. Molecular resists have been a primary focus of interest for NGL because they promise high resolution and small line edge roughness (LER), but no suitable resist candidate has emerged yet that fulfills all of the industry’s criteria. We have previously shown first extreme ultraviolet lithography (EUVL) exposures for a new fullerene derivative based three-component negative tone chemically amplified resist with suitable properties close to or within the target range of the resist metrics as set out in the International Technology Roadmap for Semiconductors for 2016. Here we present the results of our efforts to optimize the EUVL performance of our resist system especially with regards to LER.
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A. Frommhold, A. Frommhold, D. X. Yang, D. X. Yang, A. McClelland, A. McClelland, X. Xue, X. Xue, Y. Ekinci, Y. Ekinci, R. E. Palmer, R. E. Palmer, A. P. G. Robinson, A. P. G. Robinson, } "Optimization of fullerene-based negative tone chemically amplified fullerene resist for extreme ultraviolet lithography", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905119 (27 March 2014); doi: 10.1117/12.2046268; https://doi.org/10.1117/12.2046268
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