Translator Disclaimer
Paper
27 March 2014 Inhomogeneity of PAGs in resist film studied by molecular-dynamics simulations for EUV lithography
Author Affiliations +
Abstract
EUV resist materials are requested simultaneously to improve the resolution, line-edge roughness (LER), and sensitivity (RLS). In a resist film inhomogeneous structures in nanometer region may have large effects on directly the resolution and LER and indirectly on sensitivity. Inhomogeneity of PAGs in a hybrid resist for EUV lithography was investigated using molecular dynamics simulations. The hybrid resist film showed the inhomogeneous positions and motions of PAG cations and anions. Free volumes in resist matrix influence the motions of PAGs. Molecular structure such as bulky phenyl groups of a PAG cation localize the positions and reduce the motion of a cation. Chemical properties such as ionic interactions and lone-pair interaction also play an important role to determine the inhomogeneity of PAGs. Fluorine interaction enables active motions of PAG anions.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Toriumi and Toshiro Itani "Inhomogeneity of PAGs in resist film studied by molecular-dynamics simulations for EUV lithography", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511C (27 March 2014); https://doi.org/10.1117/12.2045872
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top