27 March 2014 Innovative solutions on 193 immersion-based self-aligned multiple patterning
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EUV lithography is one of the most promising techniques for sub-20nm half-pitch HVM devices, however it is well known that EUVL solutions still face significant challenges. Therefore we have focused on 193 immersion extension by using a self-aligned multiple patterning (SAMP), and this technique easily enables fine periodical patterning. Spacer patterning techniques have already been applied to sub-20nm hp advanced devices. In general, SAMP consists of SADP, SATP, SAQP, etc. We have already introduced about evolutional schemes and cost effective processes in past SPIE sessions.[1-12] SAQP enable further down-scaling to 10nm hp from SADP levels, however we must consider next advanced solution for sub-10nm hp resolution. In this paper, we will discuss about a possibility of 193 immersion extension using SAOP (self-aligned octuple patterning).
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Sakurako Natori, Sakurako Natori, Shohei Yamauchi, Shohei Yamauchi, Arisa Hara, Arisa Hara, Masatoshi Yamato, Masatoshi Yamato, Kenichi Oyama, Kenichi Oyama, Hidetami Yaegashi, Hidetami Yaegashi, "Innovative solutions on 193 immersion-based self-aligned multiple patterning", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511E (27 March 2014); doi: 10.1117/12.2046220; https://doi.org/10.1117/12.2046220

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