27 March 2014 Spin on lithographic resist trim process optimization and process window evaluation
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Abstract
The demands imposed by shrinking design rules for sub 20 nm technology on lithographic resolution are driving many avenues of research and development in an attempt to provide a robust and affordable solution for high volume manufacturing. Currently, pitch splitting techniques, such as self-aligned double and quadruple patterning (SADP or SAQP) and litho-etch litho-etch …(LELE…), are being used to bridge the gap to next generation ;lithographic techniques. Cost of ownership (CoO), process window improvements and defectivity are opportunities and concerns for extensions of these approaches, such as resist sliming on sidewall-image transfer (SIT) processes like SADP or SAQP. A spin-on resist slimming approach is implemented with line and space resist to explore process window improvements. The effects of typical process conditions and incoming variability are studied using a custom design of experiments. The optimized process is then used to evaluate process window gain compared to the process of record.
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Christos F. Karanikas, Christos F. Karanikas, J. Christopher Taylor, J. Christopher Taylor, Naveen Vaduri, Naveen Vaduri, Tafsirul Islam, Tafsirul Islam, } "Spin on lithographic resist trim process optimization and process window evaluation", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511L (27 March 2014); doi: 10.1117/12.2045908; https://doi.org/10.1117/12.2045908
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