27 March 2014 Spin on lithographic resist trim process optimization and process window evaluation
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The demands imposed by shrinking design rules for sub 20 nm technology on lithographic resolution are driving many avenues of research and development in an attempt to provide a robust and affordable solution for high volume manufacturing. Currently, pitch splitting techniques, such as self-aligned double and quadruple patterning (SADP or SAQP) and litho-etch litho-etch …(LELE…), are being used to bridge the gap to next generation ;lithographic techniques. Cost of ownership (CoO), process window improvements and defectivity are opportunities and concerns for extensions of these approaches, such as resist sliming on sidewall-image transfer (SIT) processes like SADP or SAQP. A spin-on resist slimming approach is implemented with line and space resist to explore process window improvements. The effects of typical process conditions and incoming variability are studied using a custom design of experiments. The optimized process is then used to evaluate process window gain compared to the process of record.
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Christos F. Karanikas, Christos F. Karanikas, J. Christopher Taylor, J. Christopher Taylor, Naveen Vaduri, Naveen Vaduri, Tafsirul Islam, Tafsirul Islam, "Spin on lithographic resist trim process optimization and process window evaluation", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511L (27 March 2014); doi: 10.1117/12.2045908; https://doi.org/10.1117/12.2045908


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