27 March 2014 Photoresist analysis to investigate LWR generation mechanism
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Abstract
In order to understand the mechanism of line width roughness (LWR) generation and to find control knobs for improving resist patterning properties, we developed precise direct analysis method of resist patterns. This method comprise three important processes: 1. Selective sampling of resist pattern surface and pattern core, 2. Analysis and preparative isolation of collected resist ingredient by μGPC, 3. Structural analysis by Py-GC/MS. μGPC and Py-GC/MS analysis provid resist ingredient distribution information inside resist pattern, which includes original polymer, reacted polymer, and photo acid generator (PAG) through the ArF patterning process. This novel analytical method can provide remarkably helpful information about identifying proper control knobs for lithographic performance of ArF resist and for next generation lithography (NGL), especially extreme ultra violet lithography (EUVL) materials, where exposure tool time is very limited.
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Kenji Mochida, Kenji Mochida, Shinichi Nakamura, Shinichi Nakamura, Tooru Kimura, Tooru Kimura, Kazuki Kawai, Kazuki Kawai, Yoshihiko Taguchi, Yoshihiko Taguchi, Naoki Man, Naoki Man, Hideki Hashimoto, Hideki Hashimoto, } "Photoresist analysis to investigate LWR generation mechanism", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511Q (27 March 2014); doi: 10.1117/12.2045864; https://doi.org/10.1117/12.2045864
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