27 March 2014 Study on resist performance of chemically amplified molecular resist based on noria derivative and calixarene derivative
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Abstract
Novel resist materials are required for lithographic processing with ionization radiation such as extreme ultraviolet (EUV) and electron beam (EB) exposure tool. In this study, we developed positive-tone chemically amplified molecular resists based on noria derivatives and calixarene derivatives and evaluated the lithographic performance using EUV and EB. We make clear that a small change in modification of noria resists can cause a significant change of sensitivity. Especially, it is useful for the improvement of resist sensitivities to use protecting groups such as 2-acetyloxy-2-methyladamantyl ester (AD) groups and ethoxy groups. Also, novel calixarene derivative such as pillar[5]arene protected by AD showed a semi-isolated pattern with the line width of 40 nm (pitch: 100nm). Noria derivatives and calixarene derivative resists were promising candidates because of high sensitivity, high resolution and etch durability similar to conventional resist such as ZEP 520A and UVIII.
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Hiroki Yamamoto, Hiroki Yamamoto, Hiroto Kudo, Hiroto Kudo, Takahiro Kozawa, Takahiro Kozawa, } "Study on resist performance of chemically amplified molecular resist based on noria derivative and calixarene derivative", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511Z (27 March 2014); doi: 10.1117/12.2046595; https://doi.org/10.1117/12.2046595
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