27 March 2014 Study on resist performance of chemically amplified molecular resist based on noria derivative and calixarene derivative
Author Affiliations +
Abstract
Novel resist materials are required for lithographic processing with ionization radiation such as extreme ultraviolet (EUV) and electron beam (EB) exposure tool. In this study, we developed positive-tone chemically amplified molecular resists based on noria derivatives and calixarene derivatives and evaluated the lithographic performance using EUV and EB. We make clear that a small change in modification of noria resists can cause a significant change of sensitivity. Especially, it is useful for the improvement of resist sensitivities to use protecting groups such as 2-acetyloxy-2-methyladamantyl ester (AD) groups and ethoxy groups. Also, novel calixarene derivative such as pillar[5]arene protected by AD showed a semi-isolated pattern with the line width of 40 nm (pitch: 100nm). Noria derivatives and calixarene derivative resists were promising candidates because of high sensitivity, high resolution and etch durability similar to conventional resist such as ZEP 520A and UVIII.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroki Yamamoto, Hiroto Kudo, Takahiro Kozawa, "Study on resist performance of chemically amplified molecular resist based on noria derivative and calixarene derivative", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511Z (27 March 2014); doi: 10.1117/12.2046595; https://doi.org/10.1117/12.2046595
PROCEEDINGS
9 PAGES


SHARE
Back to Top