Paper
27 March 2014 Development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL
Takashi Sato, Masako Yamakawa, Yumi Ochiai, Yu Okada, Takashi Makinoshima, Masaaki Takasuka, Masatoshi Echigo
Author Affiliations +
Abstract
In our previous paper, we reported the development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL. We also reported the EB patterning result showed the resist containing the new xanthendiol, 13-biphenyl-13H-benzoxanthen-3,10-diol, could resolve the 30 nm half-pitch pattern. In this paper, we report the resist containing the new xanthendiol could resolve the 20 nm half-pitch pattern without pattern collapse by optimizing formulation and conditions. Furthermore 15 nm half-pitch patterns were partially resolved. And the EUVL patterning result also shows 20 nm half-pitch pattern.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Sato, Masako Yamakawa, Yumi Ochiai, Yu Okada, Takashi Makinoshima, Masaaki Takasuka, and Masatoshi Echigo "Development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905121 (27 March 2014); https://doi.org/10.1117/12.2045654
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet lithography

Chemical analysis

Industrial chemicals

Line edge roughness

Electron beam lithography

Optical lithography

Raw materials

Back to Top