27 March 2014 Novel polymeric sulfonium photoacid generator and its application for chemically amplified photoresists
Author Affiliations +
Abstract
Chemically amplified resists (CARs) which involved the photoacid generator (PAG) have been widely used because of the high sensitivity. The inherent incompatibility between the polymer matrix and small molecular PAGs leads to problems including PAG phase separation, non-uniform initial PAG and photoacid distribution, as well as acid migration during the post-exposure baking (PEB) processes. The polymeric PAGs based resist systems which incorporated the PAG units into the main chain showed improved lithographic performance, such as faster photospeed and higher stability, lower outgassing, and lower LER than corresponding blend resists. In this paper, a novel type of polymeric PAGs based on poly (4-hydroxylstyrene) (PHS) was discussed. Chemically amplified photorssists were formed by the polymeric PAG and other film forming material containing acid labile groups. The polymeric PAGs showed advantage over the common small molecular PAG and patterns with 180 nm resolution was obtained in the 248-nm lithography.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juan Liu, Juan Liu, Yu Qiao, Yu Qiao, Liyuan Wang, Liyuan Wang, } "Novel polymeric sulfonium photoacid generator and its application for chemically amplified photoresists", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905124 (27 March 2014); doi: 10.1117/12.2046217; https://doi.org/10.1117/12.2046217
PROCEEDINGS
8 PAGES


SHARE
Back to Top