ArF photoresist polymers with nitrogen or sulfone moieties for negative tone development process

Dong-Gyun Kim; Su-Jee Kwon; Suk-Koo Hong; Joon Je Lee; Hyung Rae Lee; Hyo-jin Yun; Ji-Hoon Baik; Dohyuk Im; Eujean Jang; Jae-Woo Lee; Jae-Hyun Kim; Jong-Chan Lee

doi:10.1117/12.2048674

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27 March 2014 ArF photoresist polymers with nitrogen or sulfone moieties for negative tone development process

Dong-Gyun Kim, Su-Jee Kwon, Suk-Koo Hong, Joon Je Lee, Hyung Rae Lee, Hyo-jin Yun, Ji-Hoon Baik, Dohyuk Im, Eujean Jang, Jae-Woo Lee, Jae-Hyun Kim, Jong-Chan Lee

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Proceedings Volume 9051, Advances in Patterning Materials and Processes XXXI; 905126 (2014) https://doi.org/10.1117/12.2048674
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

A series of nitrogen- and sulfone-containing polymers with different molecular weights and monomer compositions were prepared via free radical polymerization to investigate the effect of polymer structure on the ArF lithographic performance in negative tone development (NTD) process. Conventional ArF photoresist polymers (Ref) were also prepared for comparison purposes. It was found that there are optimum molecular weights of the photoresist polymers to give good lithographic performance in NTD process. Photoresists with amine-containing polymers showed contact hole (CH) patterns with some defects, which could be due to the large amount of acid-quenchable amine moieties in the polymers. Lithographic performance of photoresists with sulfonate-containing polymers was close to that with Ref polymers and much better than that with sulfonamide-containing polymers.

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Dong-Gyun Kim, Su-Jee Kwon, Suk-Koo Hong, Joon Je Lee, Hyung Rae Lee, Hyo-jin Yun, Ji-Hoon Baik, Dohyuk Im, Eujean Jang, Jae-Woo Lee, Jae-Hyun Kim, and Jong-Chan Lee "ArF photoresist polymers with nitrogen or sulfone moieties for negative tone development process", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905126 (27 March 2014); https://doi.org/10.1117/12.2048674

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