EUV resists comprised of main group organometallic oligomeric materials

James Passarelli; Brian Cardineau; Ryan Del Re; Miriam Sortland; Michaela Vockenhuber; Yasin Ekinci; Chandra Sarma; Mark Neisser; Daniel A. Freedman; Robert L. Brainard

doi:10.1117/12.2046537

4 April 2014 EUV resists comprised of main group organometallic oligomeric materials

James Passarelli, Brian Cardineau, Ryan Del Re, Miriam Sortland, Michaela Vockenhuber, Yasin Ekinci, Chandra Sarma, Mark Neisser, Daniel A. Freedman, Robert L. Brainard

Author Affiliations +

Proceedings Volume 9051, Advances in Patterning Materials and Processes XXXI; 90512A (2014) https://doi.org/10.1117/12.2046537
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

We present the synthesis and preliminary lithographic evaluation of Molecular Organometallic Resists for EUV (MORE) that contain post transition metals. These post transition metal nuclei have high EUV optical density so they can utilize a high fraction of the incident photons. We will describe two technical approaches for EUV resist platforms that contain bismuth. Approach 1: Combination of organometallic compounds with photoacid generators. Approach 2: Combination of high-oxidation state metal-center oligomers that utilize carboxylate anions bound to the metal centers.

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James Passarelli, Brian Cardineau, Ryan Del Re, Miriam Sortland, Michaela Vockenhuber, Yasin Ekinci, Chandra Sarma, Mark Neisser, Daniel A. Freedman, and Robert L. Brainard "EUV resists comprised of main group organometallic oligomeric materials", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90512A (4 April 2014); https://doi.org/10.1117/12.2046537

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