4 April 2014 EUV resists comprised of main group organometallic oligomeric materials
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We present the synthesis and preliminary lithographic evaluation of Molecular Organometallic Resists for EUV (MORE) that contain post transition metals. These post transition metal nuclei have high EUV optical density so they can utilize a high fraction of the incident photons. We will describe two technical approaches for EUV resist platforms that contain bismuth. Approach 1: Combination of organometallic compounds with photoacid generators. Approach 2: Combination of high-oxidation state metal-center oligomers that utilize carboxylate anions bound to the metal centers.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Passarelli, James Passarelli, Brian Cardineau, Brian Cardineau, Ryan Del Re, Ryan Del Re, Miriam Sortland, Miriam Sortland, Michaela Vockenhuber, Michaela Vockenhuber, Yasin Ekinci, Yasin Ekinci, Chandra Sarma, Chandra Sarma, Mark Neisser, Mark Neisser, Daniel A. Freedman, Daniel A. Freedman, Robert L. Brainard, Robert L. Brainard, "EUV resists comprised of main group organometallic oligomeric materials", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90512A (4 April 2014); doi: 10.1117/12.2046537; https://doi.org/10.1117/12.2046537

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