Topographic and other effects on EUV pattern fidelity

Chandra Sarma; Trey Graves; Mark Neisser; Stewart Robertson

doi:10.1117/12.2047920

31 March 2014 Topographic and other effects on EUV pattern fidelity

Chandra Sarma, Trey Graves, Mark Neisser, Stewart Robertson

Proceedings Volume 9052, Optical Microlithography XXVII; 905206 (2014) https://doi.org/10.1117/12.2047920
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

The ability to incorporate topographic and other effects of previously patterned layers in ground rule formulation could potentially lead to significant cost savings and shortened time needed for technology ramp-up. The effect of topgraphy coupled with the diminishing depth of focus (DOF) associated with design node shrinks could become a significant yield detractor. With migration of transistor architecture from planer CMOS to 3-D FINFETs, such topographic effect could potentially pose a major challenge for future EUV processes even with significantly lower NA (Numerical Aperture) compared to current immersion DUV processes. We review how resist parameters for a given layer can be optimized to minimize imaging artifacts caused by underlying topography of previous layers. We also demonstrate how residual effects after resist parameter optimization could be handled by a sets of interlayer groundrules or novel OPC methods. Initially we study standard immersion ArF processing, then we extend the methodology to evaluate the potential issues with EUV lithography in the presence of topography. We compare the the nature and magnitude of the topography effects of such results with DUV imaging and show how we can design a new resist system to minimize such effects. We also show how future ground rule development might need to incorporate the layout information of the previously patterned layers.

Citation Download Citation

Chandra Sarma, Trey Graves, Mark Neisser, and Stewart Robertson "Topographic and other effects on EUV pattern fidelity", Proc. SPIE 9052, Optical Microlithography XXVII, 905206 (31 March 2014); https://doi.org/10.1117/12.2047920

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Extreme ultraviolet

Critical dimension metrology

Electrons

Photomasks

Optical proximity correction

Transistors

Deep ultraviolet

Show All Keywords

Keywords/Phrases

Search In:

Publication Years