Experimental validation of rigorous, 3D profile models for negative-tone develop resists

Weimin Gao; Ulrich Klostermann; Itaru Kamohara; Thomas Schmoeller; Kevin Lucas; Wolfgang Demmerle; Peter De Bisschop; Julien Mailfert

doi:10.1117/12.2046522

31 March 2014 Experimental validation of rigorous, 3D profile models for negative-tone develop resists

Weimin Gao, Ulrich Klostermann, Itaru Kamohara, Thomas Schmoeller, Kevin Lucas, Wolfgang Demmerle, Peter De Bisschop, Julien Mailfert

Author Affiliations +

Proceedings Volume 9052, Optical Microlithography XXVII; 90520C (2014) https://doi.org/10.1117/12.2046522
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

The extension of 193nm immersion lithography to the 14nm node and beyond directly encounters a significant reduction in image quality. One of the consequences is that the resist profile varies noticeably, impacting the already limited process window. Resist top-loss, top-rounding, T-top and footing all play significant roles in the subsequent etch process. Therefore, a reliable rigorous model with the capability to correctly predict resist 3D (R3D) profiles is acquiring higher importance. In this paper, we will present a calibrated rigorous model of a negative-tone develop resist. Resist profiles can be well simulated through focus and dose, and cases that match well to the experimental wafer data are validated. Such a model can not only provide early investigation of insights into process limitation and optimization, but can also complement existing OPC models to become R3D-aware in process development.

Citation Download Citation

Weimin Gao, Ulrich Klostermann, Itaru Kamohara, Thomas Schmoeller, Kevin Lucas, Wolfgang Demmerle, Peter De Bisschop, and Julien Mailfert "Experimental validation of rigorous, 3D profile models for negative-tone develop resists", Proc. SPIE 9052, Optical Microlithography XXVII, 90520C (31 March 2014); https://doi.org/10.1117/12.2046522

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