31 March 2014 Immersion lithography extension to sub-10nm nodes with multiple patterning
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This paper investigates the possibility of 193 nm immersion lithography extensions to sub-10 nm technology nodes using the patterning scheme of unidirectional (1D) grating lines and cuttings. Technological feasibility down to 5 nm nodes is examined with experimental data of self-aligned multiple patterning method (SAxP) and Litho-Etch (LE) cuttings. For the cutting by LE repetition, relationship between node definition and the repetition number n (LE^n) is discussed. Cost is evaluated for SADP, SAQP and SAOP to generate unidirectional grating formation, and the following LE^n cutting process. Finally, schemes of gridded cutting and trim are introduced, and found to be advantageous to keep the scaling merit of transistor cost at 7 and 5 nm technology nodes.
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Soichi Owa, Soichi Owa, Shinji Wakamoto, Shinji Wakamoto, Masayuki Murayama, Masayuki Murayama, Hidetami Yaegashi, Hidetami Yaegashi, Kenichi Oyama, Kenichi Oyama, "Immersion lithography extension to sub-10nm nodes with multiple patterning", Proc. SPIE 9052, Optical Microlithography XXVII, 90520O (31 March 2014); doi: 10.1117/12.2046604; https://doi.org/10.1117/12.2046604

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