31 March 2014 Resist profile simulation with fast lithography model
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Abstract
A traditional approach to construct a fast lithographic model is to match wafer top-down SEM images, contours and/or gauge CDs with a TCC model plus some simple resist representation. This modeling method has been proven and is extensively used for OPC modeling. As the technology moves forward, this traditional approach has become insufficient in regard to lithography weak point detection, etching bias prediction, etc. The drawback of this approach is from metrology and simulation. First, top-down SEM is only good for acquiring planar CD information. Some 3D metrology such as cross-section SEM or AFM is necessary to obtain the true resist profile. Second, the TCC modeling approach is only suitable for planar image simulation. In order to model the resist profile, full 3D image simulation is needed. Even though there are many rigorous simulators capable of catching the resist profile very well, none of them is feasible for full-chip application due to the tremendous consumption of computational resource. The authors have proposed a quasi-3D image simulation method in the previous study [1], which is suitable for full-chip simulation with the consideration of sidewall angles, to improve the model accuracy of planar models. In this paper, the quasi-3D image simulation is extended to directly model the resist profile with AFM and/or cross-section SEM data. Resist weak points detected by the model generated with this 3D approach are verified on the wafer.
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Yan-Ying He, Yan-Ying He, Chih-Shiang Chou, Chih-Shiang Chou, Yu-Po Tang, Yu-Po Tang, Wen-Chun Huang, Wen-Chun Huang, Ru-Gun Liu, Ru-Gun Liu, Tsai-Sheng Gau, Tsai-Sheng Gau, } "Resist profile simulation with fast lithography model", Proc. SPIE 9052, Optical Microlithography XXVII, 90520Y (31 March 2014); doi: 10.1117/12.2045538; https://doi.org/10.1117/12.2045538
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