31 March 2014 Immersion scanners enabling 10nm half-pitch production and beyond
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Abstract
Nikon’s new immersion scanner “NSR-S630D” has been developed to deliver enhanced product overlay and CD uniformity while improving productivity at 10 nm half pitch node and beyond. The NSR-S630D is equipped with various advanced technologies. Among them are the new reticle stage with encoder servo control and advanced reticle bending mechanism, new optics with enhanced correction knobs for thermal aberration control, and advanced thermally stable wafer stage; all of which are key components to providing the best scanner solution to meet the requirements for 10 nm half pitch node and beyond. In this paper, we describe the NSR-630D development concept and the latest performance data at factory. One of the key factors in improving overlay is shot distortion; in order to improve shot distortion, the NSR-S630D is equipped with a newly developed state-of-the-art projection lens. The overall overlay improvements have been made possible not only by minimizing lens distortion through advancements in lens manufacturing techniques, but also by reducing thermal distortion, which is especially important in actual device production. In addition, we have also added a new function for more effective reticle heating distortion compensation. In order to improve wafer grid performance, we newly designed a wafer table with enhanced thermal stability. We have also further improved the reticle bending system in order to minimize the field curvature induced by projection lens thermal aberration. The new features described above, in addition to the matured Streamlign platform, have enabled the NSR-S630D to deliver highest accuracy and stability.
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Hiroyuki Egashira, Hiroyuki Egashira, Yusaku Uehara, Yusaku Uehara, Yosuke Shirata, Yosuke Shirata, Yuichi Shibazaki, Yuichi Shibazaki, Jun Ishikawa, Jun Ishikawa, Takayuki Funatsu, Takayuki Funatsu, Masanori Ohba, Masanori Ohba, } "Immersion scanners enabling 10nm half-pitch production and beyond", Proc. SPIE 9052, Optical Microlithography XXVII, 90521F (31 March 2014); doi: 10.1117/12.2046238; https://doi.org/10.1117/12.2046238
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