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31 March 2014 Flexible power 90W to 120W ArF immersion light source for future semiconductor lithography
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Abstract
Semiconductor market demand for improved performance at lower cost continues to drive enhancements in excimer light source technologies. Increased output power, reduced variability in key light source parameters, and improved beam stability are required of the light source to support immersion lithography, multi-patterning, and 450mm wafer applications in high volume semiconductor manufacturing. To support future scanner needs, Cymer conducted a technology demonstration program to evaluate the design elements for a 120W ArFi light source. The program was based on the 90W XLR 600ix platform, and included rapid power switching between 90W and 120W modes to potentially support lot-to-lot changes in desired power. The 120W requirements also included improved beam stability in an exposure window conditionally reduced by 20%. The 120W output power is achieved by efficiency gains in system design, keeping system input power at the same level as the 90W XLR 600ix. To assess system to system variability, detailed system testing was conducted from 90W – 120W with reproducible results.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Burdt, J. Thornes, T. Duffey, T. Bibby, R. Rokitski, E. Mason, J. Melchior, T. Aggarwal, D. Haran, J. Wang, G. Rechtsteiner, M. Haviland, and D. Brown "Flexible power 90W to 120W ArF immersion light source for future semiconductor lithography", Proc. SPIE 9052, Optical Microlithography XXVII, 90522K (31 March 2014); https://doi.org/10.1117/12.2048082
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