Paper
28 March 2014 Benchmarking process integration and layout decomposition of directed self-assembly and self-aligned multiple patterning techniques
Yijian Chen, Jun Zhou, Jun You, Hongyi Liu
Author Affiliations +
Abstract
In this paper, we present a benchmarking study of directed self-assembly (DSA) and self-aligned multiple patterning (SAMP) techniques for potential applications in manufacturing 10-nm (half-pitch) IC devices. Using the self-aligned quadruple patterning (SAQP) process as an example, we compare their process characteristics and complexity/costs, identify the integration challenges, and propose various patterning solutions for both BEOL and FEOL applications. Major differences in DSA and SAQP mask strategy, layout decomposition algorithm, and pattern-generation modeling are discussed, and critical requirements of overlay accuracy and CD control for implementing a DSA process in NAND wordline patterning are indentified. DSA technique is found to be a complementary solution for certain niche applications and we suggest that our industry should allocate more R and D resources to solve the 2-D SAMP layout decomposition challenges for logic BEOL patterning. We also propose an “out-of-the-box” idea of combining DSA and SADP process to significantly improve the 2-D design flexibility and develop a layout decomposition algorithm for this hybrid process
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Yijian Chen, Jun Zhou, Jun You, and Hongyi Liu "Benchmarking process integration and layout decomposition of directed self-assembly and self-aligned multiple patterning techniques", Proc. SPIE 9053, Design-Process-Technology Co-optimization for Manufacturability VIII, 90530B (28 March 2014); https://doi.org/10.1117/12.2046085
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KEYWORDS
Optical lithography

Directed self assembly

Photomasks

Algorithm development

Etching

Back end of line

Amorphous silicon

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