28 March 2014 Localization concept of re-decomposition area to fix hotspots for LELE process
Author Affiliations +
Litho-Etch-Litho-Etch (LELE) type double patterning technology (DPT) is known to have an advantage of layout flexibility. However, there are two problems when a hotspot, which is not fixable by tuning OPC, is detected. One is repeating a data preparation flow including decomposition, OPC, and verification by lithography simulation is quite time consuming. The other is a risk to introduce new hotspots at different locations. In this report, a new method to fix hotspots with layout modification of limited area will be presented. The proposed method can reduce not only turnaround time to fix a hotspot but also the number of iterations since it prevents generation of hotspots at new locations.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoko Yokoyama, Yoko Yokoyama, Keishi Sakanushi, Keishi Sakanushi, Yukihide Kohira, Yukihide Kohira, Atsushi Takahashi, Atsushi Takahashi, Chikaaki Kodama, Chikaaki Kodama, Satoshi Tanaka, Satoshi Tanaka, Shigeki Nojima, Shigeki Nojima, "Localization concept of re-decomposition area to fix hotspots for LELE process ", Proc. SPIE 9053, Design-Process-Technology Co-optimization for Manufacturability VIII, 90530V (28 March 2014); doi: 10.1117/12.2046263; https://doi.org/10.1117/12.2046263

Back to Top