Proceedings Volume 9054 is from: Logo
23-27 February 2014
San Jose, California, United States
Front Matter
Proc. SPIE 9054, Front Matter: Volume 9054, 905401 (22 April 2014); doi: 10.1117/12.2064485
Reviews and Overviews of Nanopatterning Challenges
Proc. SPIE 9054, Patterning challenges in the fabrication of 12 nm half-pitch dual damascene copper ultra low-k interconnects, 905404 (28 March 2014); doi: 10.1117/12.2048599
Nanopatterning for Advanced Logic and Memory Technology Nodes
Proc. SPIE 9054, Line width roughness reduction strategies for patterns exposed via electron beam lithography, 905405 (28 March 2014); doi: 10.1117/12.2047972
Proc. SPIE 9054, Effect of etch pattern transfer on local overlay (OVL) margin in 28nm gate integration., 905406 (28 March 2014); doi: 10.1117/12.2042080
Proc. SPIE 9054, Gate double patterning strategies for 10nm node FinFET devices, 905407 (28 March 2014); doi: 10.1117/12.2045647
Proc. SPIE 9054, 28nm FDSOI high-K metal gate CD variability investigation, 905408 (28 March 2014); doi: 10.1117/12.2045904
Proc. SPIE 9054, Highly selective etch gas chemistry design for precise DSAL dry development process, 905409 (28 March 2014); doi: 10.1117/12.2046145
Plasma and Resist Interactions, Including Patterning Quality Control (LER, CD Uniformity, etc.)
Proc. SPIE 9054, Hydrogen plasma treatment: the evolution of roughness in frequency domain, 90540C (28 March 2014); doi: 10.1117/12.2046299
Proc. SPIE 9054, Line roughness formation during plasma etch: mechanism and reduction, 90540D (28 March 2014); doi: 10.1117/12.2046327
Patterning Integration Schemes (multilayer patterning, self-aligned patterning, etc.)
Proc. SPIE 9054, Plasma etching and integration challenges using alternative patterning techniques for 11nm node and beyond, 90540E (28 March 2014); doi: 10.1117/12.2046251
Proc. SPIE 9054, Etch challenges for DSA implementation in CMOS via patterning, 90540G (28 March 2014); doi: 10.1117/12.2046267
New Plasma Sources and New Etching Technologies
Proc. SPIE 9054, Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH, 90540H (28 March 2014); doi: 10.1117/12.2048898
Proc. SPIE 9054, Precision integrated thickness control with gas cluster ion beam etch, 90540I (28 March 2014); doi: 10.1117/12.2043658
Proc. SPIE 9054, Advanced plasma sources for the future 450mm etch process, 90540K (28 March 2014); doi: 10.1117/12.2046660
Emerging Patterning Technologies (DSA and others)
Proc. SPIE 9054, A comparison of the pattern transfer of line-space patterns from graphoepitaxial and chemoepitaxial block co-polymer directed self-assembly, 90540M (28 March 2014); doi: 10.1117/12.2045580
Proc. SPIE 9054, Directed self-assembly of PS-b-PDMS into 193nm photoresist patterns and transfer into silicon by plasma etching, 90540O (28 March 2014); doi: 10.1117/12.2047287
Poster Session
Proc. SPIE 9054, Litho resist rework influences on Cu metal layer patterning with TiN-hard mask, 90540P (28 March 2014); doi: 10.1117/12.2045307
Proc. SPIE 9054, Spin-on carbon using fullerene derivatives, 90540Q (28 March 2014); doi: 10.1117/12.2046278
Proc. SPIE 9054, Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond, 90540R (28 March 2014); doi: 10.1117/12.2048320
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