Line width roughness reduction strategies for patterns exposed via electron beam lithography

J. Jussot; E. Pargon; B. Icard; J. Bustos; L. Pain

doi:10.1117/12.2047972

28 March 2014 Line width roughness reduction strategies for patterns exposed via electron beam lithography

J. Jussot, E. Pargon, B. Icard, J. Bustos, L. Pain

Proceedings Volume 9054, Advanced Etch Technology for Nanopatterning III; 905405 (2014) https://doi.org/10.1117/12.2047972
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Among the different next generation lithography techniques, multibeam may arise as a cost effective solution to pattern sub-22nm technological nodes. A low LWR is required to keep downscaling. In this study, capability of producing low LWR 32/32nm L/S patterns with two different ebeam tools was evaluated. One state-of-the-art single variable shapedbeam (50kV) VISTEC SB3054 and a multiple Gaussian beam MAPPER ASTERIX pre-alpha tool (5kV) are used. Thanks to the great flexibility of e-beam lithography, exposure of biased designs in which the exposed area is reduced is carried out. Such exposure strategy showed a great effectiveness to lower LWR (down to around 3.0nm). To reduce further LWR some post litho-treatments such as thermal processing, plasma treatments and UV treatments are used on patterns exposed with VISTEC SB3054. A combination of a biased exposure and post-litho treatments reduced initial 4.8nm LWR down to 2.8nm (41.7% reduction). Once complete the LWR reduction protocol will be transferred on MAPPER exposures.

Citation Download Citation

J. Jussot, E. Pargon, B. Icard, J. Bustos, and L. Pain "Line width roughness reduction strategies for patterns exposed via electron beam lithography", Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 905405 (28 March 2014); https://doi.org/10.1117/12.2047972

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