28 March 2014 Plasma etching and integration challenges using alternative patterning techniques for 11nm node and beyond
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Abstract
For 11nm and below, several alternatives are still potential candidates to meet the patterning requirements. Spacer patterning, Mask Less Lithography (i.e. Electron beam lithography) and Direct Self Assembly are alternatives under development at CEA-LETI. We have demonstrated the integration of these alternative techniques in front end of line and back end of line levels. Common challenges such as minimum achievable CD, CD control through the integration steps, mask budget and LWR were compared for these techniques.
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S. Barnola, P. Pimenta Barros, C. Arvet, C. Vizioz, N. Posseme, A. Gharbi, M. Argoud, R. Tiron, J. Pradelles, L. Desvoivres, S. Barraud, "Plasma etching and integration challenges using alternative patterning techniques for 11nm node and beyond", Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 90540E (28 March 2014); doi: 10.1117/12.2046251; https://doi.org/10.1117/12.2046251
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