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28 March 2014 A comparison of the pattern transfer of line-space patterns from graphoepitaxial and chemoepitaxial block co-polymer directed self-assembly
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Abstract
Block co-polymer directed self-assembly (BCP DSA) has become an area of fervent research activity as a potential alternative or adjunct to EUV lithography or self-aligned pitch multiplication strategies. This presentation will evaluate two DSA strategies for patterning line-space arrays at 30nm pitch: graphoepitaxial DSA with surface-parallel cylinder BCPs and chemoepitaxial DSA with surface-normal lamellar BCPs. A comparison of pattern transfer into hard-mask and substrate films will be made by consideration of line and space CDs, line profile of cross-sectional SEM images, and comparison of relative LWR/SWR. The processes will be benchmarked against Micron’s process used in manufacturing its 16nm half-pitch NAND part.
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Dan B. Millward, Gurpreet S. Lugani, Ranjan Khurana, Scott L. Light, Ardavan Niroomand, Philip D. Hustad, Peter Trefonas, Shih-wei Chang, Christopher N. Lee, and Dung Quach "A comparison of the pattern transfer of line-space patterns from graphoepitaxial and chemoepitaxial block co-polymer directed self-assembly", Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 90540M (28 March 2014); https://doi.org/10.1117/12.2045580
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