Litho resist rework influences on Cu metal layer patterning with TiN-hard mask

Marcus Dankelmann; Markus Czekalla; Heiko Estel; Jens Hahn; Bee Kim Hong; Mario Lamm; Eric Neubert; Michael Renner; Rainer Scheibel; Maik Stegemann; Jens Schneider

doi:10.1117/12.2045307

28 March 2014 Litho resist rework influences on Cu metal layer patterning with TiN-hard mask

Marcus Dankelmann, Markus Czekalla, Heiko Estel, Jens Hahn, Bee Kim Hong, Mario Lamm, Eric Neubert, Michael Renner, Rainer Scheibel, Maik Stegemann, Jens Schneider

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Proceedings Volume 9054, Advanced Etch Technology for Nanopatterning III; 90540P (2014) https://doi.org/10.1117/12.2045307
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

The use of TiN-Hard masks for Cu metal layer patterning has become a common technique for trench first metal hard mask (TFMH) back end of line (BEOL) integration schemas. Resist rework influences the chemical and physical behavior of the TiN hard mask and therefore the final result of the dual damascene etch process in terms of critical line dimension (CD) and trench taper determining the electrical metal sheet resistance. Within this paper, the effects of three different resist rework strip procedures on subsequent TiN hard mask and dual damascene etching, using O₂, H₂N₂ and H₂O plasma processes, are compared. Furthermore, the interaction of the rework process with the CD tuning capabilities in dual damascene etch are evaluated. Summarizing the data, a stable process flow for wafers with and without resist rework is shown, eliminating litho CD rework offsets, resulting in metal trench processing with tight geometrical and electrical distributions.

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Marcus Dankelmann, Markus Czekalla, Heiko Estel, Jens Hahn, Bee Kim Hong, Mario Lamm, Eric Neubert, Michael Renner, Rainer Scheibel, Maik Stegemann, and Jens Schneider "Litho resist rework influences on Cu metal layer patterning with TiN-hard mask", Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 90540P (28 March 2014); https://doi.org/10.1117/12.2045307

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KEYWORDS

Etching

Oxygen

Photoresist processing

Semiconducting wafers

Photomasks

Metals

Plasma

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