28 November 2013 Femtosecond-laser-induced destruction of boron-nitride nanotubes and boron-nitride doped graphene
Author Affiliations +
Proceedings Volume 9065, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2013; 90650K (2013) https://doi.org/10.1117/12.2051650
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies 2013, 2013, St. Petersburg, Russian Federation
Abstract
By means of first principles calculations we studied the intense femtosecond-laser excitation of several boron­ nitride nanotubes and a boron-nitride doped graphene layer up to irradiation levels where these structures disintegrate. We performed molecular dynamics simulations using our in-house Code for Highly excited Valence Electron Systems (CHIVES). For different boron-nitride nanotubes we determined the damage threshold in terms of the electronic temperature and the absorbed energy per atom. We found that all nanotubes studied were destroyed in the first 200 fs after an ultrafast laser excitation heating the electrons to 108 mHa (34103 K). Some tubes also disintegrated at lower electronic temperatures. For the boron-nitride doped graphene we found that at a laser-induced electronic temperature of 100 mHa (31577 K) bonds break and the boron-nitride dimer leaves the structure.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernd Bauerhenne, Bernd Bauerhenne, Nils Eschstruth, Nils Eschstruth, Eeuwe S. Zijlstra, Eeuwe S. Zijlstra, Martin E. Garcia, Martin E. Garcia, } "Femtosecond-laser-induced destruction of boron-nitride nanotubes and boron-nitride doped graphene", Proc. SPIE 9065, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2013, 90650K (28 November 2013); doi: 10.1117/12.2051650; https://doi.org/10.1117/12.2051650
PROCEEDINGS
6 PAGES


SHARE
Back to Top