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17 December 2013 The effect of surface treatment on electrical and photoelectrical properies of anisotype heterojunctions n-TiN/p-Si
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Proceedings Volume 9066, Eleventh International Conference on Correlation Optics; 906614 (2013) https://doi.org/10.1117/12.2048631
Event: Eleventh International Conference on Correlation Optics, 2013, Chernivsti, Ukraine
Abstract
We report the results of the investigation of electrical properties of photosensitive anisotype heterojunctions n- TiN/p-Si with different conditions of Si surface treatments. The analysis of the measured I-V characteristics of the heterojunctions under dark conditions has shown that values of the height of the potential barrier and series resistance decreases with the decrease of the thickness of native oxide. The dominating tunnel-recombination mechanism of current transport through the heterojunctions under investigation was determined to be independent on the conditions of surface treatment. We have established that the n-TiN/p-Si heterojunction oxidized in bidistilled water at 70ºC for 30 s possesses the lowest density of interface states and, thus lowest surface recombination velocity.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. N. Solovan, V. V. Brus, and P. D. Maryanchuk "The effect of surface treatment on electrical and photoelectrical properies of anisotype heterojunctions n-TiN/p-Si", Proc. SPIE 9066, Eleventh International Conference on Correlation Optics, 906614 (17 December 2013); https://doi.org/10.1117/12.2048631
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