16 December 2013 Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 906803 (2013) https://doi.org/10.1117/12.2054097
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.
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Yan Li, Yan Li, Dongping Zhang, Dongping Zhang, Bo Wang, Bo Wang, Guangxing Liang, Guangxing Liang, Zhuanghao Zheng, Zhuanghao Zheng, Jingting Luo, Jingting Luo, Xingmin Cai, Xingmin Cai, Ping Fan, Ping Fan, } "Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906803 (16 December 2013); doi: 10.1117/12.2054097; https://doi.org/10.1117/12.2054097
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