16 December 2013 Carrier sign reversal in amorphous silicon ruthenium thin films deposited by co-sputtering
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680D (2013) https://doi.org/10.1117/12.2052223
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
We report on the co-sputtering growth of amorphous silicon ruthenium (a-Si1-xRux) thin films, in which carrier sign reversal is observed by Hall measurement with increasing Ru concentration. High conductivity and suitable temperature coefficient of resistivity (TCR) are obtained, respectively. Raman spectroscopy reveals the degradation of amorphous network, which is caused by doped Ru atoms due to the different size and eletronegativity between Si and Ru atoms. The Hall effect anomaly will be related to the impurities and disordered structure.
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Anran Guo, Anran Guo, Jian He, Jian He, Chong Wang, Chong Wang, Wei Li, Wei Li, Yadong Jiang, Yadong Jiang, } "Carrier sign reversal in amorphous silicon ruthenium thin films deposited by co-sputtering", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680D (16 December 2013); doi: 10.1117/12.2052223; https://doi.org/10.1117/12.2052223
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