16 December 2013 The study of substrate material for deposited titanium nitride thin film and its influence
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680H (2013) https://doi.org/10.1117/12.2053929
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
In the paper, the TiNx thin film was prepared with two substrate Si-p(111) and Si-p(100) by dc reactive magnetron sputtering method and their performance was studied. The results show that the XRD diffraction peak with Small number, peak shape Octavia is not overlapping with TiNx diffraction peak for TiNx thin film with p-si(111) substrate. But, the film is of preferred orientation for (200). And all these were responsible for analysis of TiNx thin film growth on its structure and crystalline. Therefore, the deposition of TiNx thin film is appropriate for p-si(111) substrate. It can meet the requirements of the preparation of optical thin film quality.
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Shuying Fu, "The study of substrate material for deposited titanium nitride thin film and its influence ", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680H (16 December 2013); doi: 10.1117/12.2053929; https://doi.org/10.1117/12.2053929
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