16 December 2013 Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680M (2013) https://doi.org/10.1117/12.2054037
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Rapid Thermal Annealing (RTA) process was introduced to the experiment of Aluminum-induced crystallization of a-Si, based on sputtering method, on low cost glass substrate. A stack of glass/Al (150 nm)/Si (220 nm) was deposited by sputtering sequentially. Samples were annealed under RTA process, then annealed in the tube annealing furnace at 400 °C for 5 h. The grain crystallization was inspected by optical microscopy (OM), ,Raman spectroscopy, X-ray diffraction (XRD),and energy dispersive spectroscopy (EDS). The preferential orientation (111) was observed, with a Raman Peak at 520.8cm-1, Different annealing periods were discussed.
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Jun Qian, Jirong Li, Yang Liao, Weimin Shi, Huahui Kuang, Xiuchun Ming, Jin Liu, Jing Jin, Juan Qin, "Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680M (16 December 2013); doi: 10.1117/12.2054037; https://doi.org/10.1117/12.2054037
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