Preparation of graphite and graphene thick film on AlN substrate

Saijie Gao; Yue Shen; Feng Gu; Mengjie Xu; Xiafan Wu; Jindong Xu

doi:10.1117/12.2054157

16 December 2013 Preparation of graphite and graphene thick film on AlN substrate

Saijie Gao, Yue Shen, Feng Gu, Mengjie Xu, Xiafan Wu, Jindong Xu

Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680O (2013) https://doi.org/10.1117/12.2054157
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China

Abstract

High-purity AlN ceramic substrate was prepared by conventional sintering in N₂ atmosphere at 1710°C for 3 hours. Measurement results of SEM, X-ray Diffraction (XRD) indicated that the AlN substrate was sintered completely, average particle size is about 1-3 μm and the porosity is very low. Graphite and graphene electrodes were obtained by simple doctor-blade coating method on AlN substrate. The samples were investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscope (SEM). Sheet resistance is measured by the four-probe method. Annealing at H₂ reduction atmosphere can slow down graphitized trend of graphene and protect it’s structure. The graphite electrode was applied in typical sandwich-structure DSSCs with ZnO as photoanodes, and the photoelectric conversion efficiency (η) was about 0.78%, which can be optimized and applied in DSSCs by process optimization.

Citation Download Citation

Saijie Gao, Yue Shen, Feng Gu, Mengjie Xu, Xiafan Wu, and Jindong Xu "Preparation of graphite and graphene thick film on AlN substrate", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680O (16 December 2013); https://doi.org/10.1117/12.2054157

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