16 December 2013 Preparation of graphite and graphene thick film on AlN substrate
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680O (2013) https://doi.org/10.1117/12.2054157
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
High-purity AlN ceramic substrate was prepared by conventional sintering in N2 atmosphere at 1710°C for 3 hours. Measurement results of SEM, X-ray Diffraction (XRD) indicated that the AlN substrate was sintered completely, average particle size is about 1-3 μm and the porosity is very low. Graphite and graphene electrodes were obtained by simple doctor-blade coating method on AlN substrate. The samples were investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscope (SEM). Sheet resistance is measured by the four-probe method. Annealing at H2 reduction atmosphere can slow down graphitized trend of graphene and protect it’s structure. The graphite electrode was applied in typical sandwich-structure DSSCs with ZnO as photoanodes, and the photoelectric conversion efficiency (η) was about 0.78%, which can be optimized and applied in DSSCs by process optimization.
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Saijie Gao, Saijie Gao, Yue Shen, Yue Shen, Feng Gu, Feng Gu, Mengjie Xu, Mengjie Xu, Xiafan Wu, Xiafan Wu, Jindong Xu, Jindong Xu, } "Preparation of graphite and graphene thick film on AlN substrate", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680O (16 December 2013); doi: 10.1117/12.2054157; https://doi.org/10.1117/12.2054157
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