16 December 2013 Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680R (2013) https://doi.org/10.1117/12.2053858
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMNT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrate by a modified sol-gel process with Nb2O5 as the niobium source. XRD analysis shows that PMNT thin films with pure perovskite were obtained by spin-coating and annealing at 700°C for 20 minutes. The remanent polarization and coercive field of the PMNT thin films are about 7.69μC/cm2 and 80.75kV/cm, respectively. The dielectric and C-V curve of PMNT thin films are also investigated. The dielectric constant ( εr ) reaches 935 and the dissipation factor (tanδ)is about 0.04 at 1kHz.
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Aiyun Liu, Aiyun Liu, Hailong Han, Hailong Han, Linlin Wei, Linlin Wei, Peng Wang, Peng Wang, Fangting Lin, Fangting Lin, Wangzhou Shi, Wangzhou Shi, Xiangjian Meng, Xiangjian Meng, Jinglan Sun, Jinglan Sun, Junhao Chu, Junhao Chu, Chengbin Jing, Chengbin Jing, } "Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680R (16 December 2013); doi: 10.1117/12.2053858; https://doi.org/10.1117/12.2053858
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