16 December 2013 Highly (222)-oriented pyrochlore PZN-PT thin films prepared by pulsed laser deposition
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680U (2013) https://doi.org/10.1117/12.2053925
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Highly (222)-oriented 90%Pb(Zn1/3Nb2/3)O3-10%PbTiO3(abbreviated PZN–PT) thin films, about 550nm in thickness, have been successfully grown on (111)Pt/Ti/SiO2/Si substrate by pulsed laser deposition method. Pure pyrochlore phase with highly (222)-preferred orientation, determined by X-ray diffraction, was formed in the PZN–PT thin films when the temperature of substrates is 550°C. FE-SEM investigation shows that the surface appearance and the cross section of the films are smooth and crack-free with some dispersive spherical protrusions. The dielectric constant and loss of the thin films were measured using an impedance analyzer (HP4194A). The dielectric constant ( εr ) and the dissipation factor ( tanδ ) at 1 kHz are 205 and 0.03, respectively.
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H. L. Han, A. Y. Liu, L. L. Wei, P. Wang, F. T. Lin, W. Z. Shi, C. B. Jing, "Highly (222)-oriented pyrochlore PZN-PT thin films prepared by pulsed laser deposition", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680U (16 December 2013); doi: 10.1117/12.2053925; https://doi.org/10.1117/12.2053925
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